motorola semiconductor technical data motorola tvs/zener device data 6-1 500 mw do-35 glass data sheet 500 mw do-35 glass zener voltage regulator diodes general data applicable to all series in this group 500 milliwatt hermetically sealed glass silicon zener diodes specification features: ? complete voltage range e 1.8 to 200 volts ? do-204ah package e smaller than conventional do-204aa package ? double slug type construction ? metallurgically bonded construction mechanical characteristics: case: double slug type, hermetically sealed glass maximum lead temperature for soldering purposes: 230 c, 1/16 from case for 10 seconds finish: all external surfaces are corrosion resistant with readily solderable leads polarity: cathode indicated by color band. when operated in zener mode, cathode will be positive with respect to anode mounting position: any wafer fab location: phoenix, arizona assembly/test location: seoul, korea maximum ratings (motorola devices)* rating symbol value unit dc power dissipation and t l 75 c lead length = 3/8 derate above t l = 75 c p d 500 4 mw mw/ c operating and storage temperature range t j , t stg 65 to +200 c * some part number series have lower jedec registered ratings. 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 180 200 t l , lead temperature ( c) p d , maximum power dissipation (watts) figure 1. steady state power derating heat sinks 3/8o 3/8o 1n4678 series case 299 do-204ah glass 500 mw do-35 glass glass zener diodes 500 milliwatts 1.8200 volts
general data e 500 mw do-35 glass motorola tvs/zener device data 6-2 500 mw do-35 glass data sheet low level oxide passivated zener diodes for applications re- quiring extremely low operating currents, low leakage, and sharp breakdown voltage. ? zener voltage specified @ i zt = 50 m a ? maximum delta v z given from 10 to 100 m a electrical characteristics (t a = 25 c, v f = 1.5 v max at i f = 100 ma for all types) type number zener voltage v z @ i zt = 50 m a volts maximum reverse current i r m a test voltage v r volts maximum zener current i zm ma maximum voltage change d v z volts number (note 1) nom (note 1) min max (note 3) i zm ma (note 2) d v z v olts (note 4) 1n4678 1.8 1.71 1.89 7.5 1 120 0.7 1n4679 2 1.9 2.1 5 1 110 0.7 1n4680 2.2 2.09 2.31 4 1 100 0.75 1n4681 2.4 2.28 2.52 2 1 95 0.8 1n4682 2.7 2.565 2.835 1 1 90 0.85 1n4683 3 2.85 3.15 0.8 1 85 0.9 1n4684 3.3 3.135 3.465 7.5 1.5 80 0.95 1n4685 3.6 3.42 3.78 7.5 2 75 0.95 1n4686 3.9 3.705 4.095 5 2 70 0.97 1n4687 4.3 4.085 4.515 4 2 65 0.99 1n4688 4.7 4.465 4.935 10 3 60 0.99 1n4689 5.1 4.845 5.355 10 3 55 0.97 1n4690 5.6 5.32 5.88 10 4 50 0.96 1n4691 6.2 5.89 6.51 10 5 45 0.95 1n4692 6.8 6.46 7.14 10 5.1 35 0.9 1n4693 7.5 7.125 7.875 10 5.7 31.8 0.75 1n4694 8.2 7.79 8.61 1 6.2 29 0.5 1n4695 8.7 8.265 9.135 1 6.6 27.4 0.1 1n4696 9.1 8.645 9.555 1 6.9 26.2 0.08 1n4697 10 9.5 10.5 1 7.6 24.8 0.1 1n4698 11 10.45 11.55 0.05 8.4 21.6 0.11 1n4699 12 11.4 12.6 0.05 9.1 20.4 0.12 1n4700 13 12.35 13.65 0.05 9.8 19 0.13 1n4701 14 13.3 14.7 0.05 10.6 17.5 0.14 1n4702 15 14.25 15.75 0.05 11.4 16.3 0.15 1n4705 18 17.1 18.9 0.05 13.6 13.2 0.18 1n4713 30 28.5 31.5 0.01 22.8 7.9 0.3 note 1. tolerance and voltage designation (v z ) the type numbers shown have a standard tolerance of 5% on the nominal zener voltage, c for 2%, d for 1%. note 2. maximum zener current ratings (i zm ) maximum zener current ratings are based on maximum zener voltage of the individual units and jedec 250 mw rating. note 3. reverse leakage current (i r ) reverse leakage currents are guaranteed and measured at v r as shown on the table. note 4. maximum voltage change ( d v z ) voltage change is equal to the difference between v z at 100 m a and v z at 10 m a . note 5. zener voltage (v z ) measurement nominal zener voltage is measured with the device junction in thermal equilibrium at the lead temperature at 30 c 1 c and 3/8 lead length.
general data e 500 mw do-35 glass motorola tvs/zener device data 6-3 500 mw do-35 glass data sheet application note e zener voltage since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junc- tion temperature under any set of operating conditions in order to calculate its value. the following procedure is recom- mended: lead temperature, t l , should be determined from: t l = q la p d + t a . q la is the lead-to-ambient thermal resistance ( c/w) and p d is the power dissipation. the value for q la will vary and depends on the device mounting method. q la is generally 30 to 40 c/w for the various clips and tie points in common use and for printed circuit board wiring. the temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the mea- sured value of t l , the junction temperature may be deter- mined by: t j = t l + d t jl . d t jl is the increase in junction temperature above the lead temperature and may be found from figure 2 for dc power: d t jl = q jl p d . for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( d t j ) may be estimated. changes in voltage, v z , can then be found from: d v = q vz t j . q vz , the zener voltage temperature coefficient, is found from figures 4 and 5. under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. surge limitations are given in figure 7. they are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be ex- tremely high in small spots, resulting in device degradation should the limits of figure 7 be exceeded. ll 500 400 300 200 100 0 0 0.2 0.4 0.6 0.8 1 2.460 v 62200 v l, lead length to heat sink (inch) jl , junction-to-lead thermal resistance ( c/w) q figure 2. typical thermal resistance typical leakage current at 80% of nominal breakdown voltage +25 c +125 c 1000 7000 5000 2000 1000 700 500 200 100 70 50 20 10 7 5 2 1 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 0.002 0.001 34 5 6 7 8 9101112131415 v z , nominal zener voltage (volts) i , leakage current ( a) m r figure 3. typical leakage current
general data e 500 mw do-35 glass motorola tvs/zener device data 6-4 500 mw do-35 glass data sheet +12 +10 +8 +6 +4 +2 0 2 4 2345 678 9101112 v z , zener voltage (volts) figure 4a. range for units to 12 volts v z @i zt (note 2) range temperature coefficients (55 c to +150 c temperature range; 90% of the units are in the ranges indicated.) 100 70 50 30 20 10 7 5 3 2 1 2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100 v z , zener voltage (volts) figure 4b. range for units 12 to 100 volts range v z @i z (note 2) 120 130 140 150 160 170 180 190 200 200 180 160 140 120 100 v z , zener voltage (volts) figure 4c. range for units 120 to 200 volts v z @i zt (note 2) +6 +4 +2 0 2 4 3 4 56 78 v z , zener voltage (volts) figure 5. effect of zener current note: below 3 volts and above 8 volts note: changes in zener current do not note: affect temperature coefficients 1ma 0.01 ma v z @i z t a =25 c 1000 c, capacitance (pf) 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 v z , zener voltage (volts) figure 6a. typical capacitance 2.4100 volts t a =25 c 0 v bias 1 v bias 50% of v z bias 100 70 50 30 20 10 7 5 3 2 1 120 140 160 180 190 200 220 v z , zener voltage (volts) figure 6b. typical capacitance 120200 volts t a =25 c 1 volt bias 50% of v z bias 0 bias q v z , temperature coefficient (mv/ c) 20 ma c, capacitance (pf) q v z , temperature coefficient (mv/ c) q v z , temperature coefficient (mv/ c) q v z , temperature coefficient (mv/ c)
general data e 500 mw do-35 glass motorola tvs/zener device data 6-5 500 mw do-35 glass data sheet 100 70 50 30 20 10 7 5 3 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 p pk , peak surge power (watts) pw, pulse width (ms) 5% duty cycle 10% duty cycle 20% duty cycle 11 v91 v nonrepetitive 1.8 v10 v nonrepetitive rectangular waveform t j =25 c prior to initial pulse figure 7a. maximum surge power 1.891 volts 1000 700 500 300 200 100 70 50 30 20 10 7 5 3 2 1 0.01 0.1 1 10 100 1000 p pk , peak surge power (watts) pw, pulse width (ms) figure 7b. maximum surge power do-204ah 100200 volts 1000 500 200 100 50 20 10 1 2 5 0.1 0.2 0.5 1 2 5 10 20 50 100 i z , zener current (ma) figure 8. effect of zener current on zener impedance z z , dynamic impedance (ohms) z z , dynamic impedance (ohms) 1000 700 500 200 100 70 50 20 10 7 5 2 1 1 2 3 5 7 10 20 30 50 70 100 v z , zener voltage (volts) figure 9. effect of zener voltage on zener impedance figure 10. typical forward characteristics rectangular waveform, t j =25 c 100200 volts nonrepetitive t j =25 c i z (rms) = 0.1 i z (dc) f = 60 hz i z =1ma 5ma 20 ma t j =25 c i z (rms) = 0.1 i z (dc) f = 60 hz v z = 2.7 v 47 v 27 v 6.2 v v f , forward voltage (volts) 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1000 500 200 100 50 20 10 5 2 1 i f , forward current (ma) minimum maximum 150 c 75 c 0 c 25 c
general data e 500 mw do-35 glass motorola tvs/zener device data 6-6 500 mw do-35 glass data sheet figure 11. zener voltage versus zener current e v z = 1 thru 16 volts v z , zener voltage (volts) i z , zener current (ma) 20 10 1 0.1 0.01 1 2 34 56 7 8 910111213141516 t a =25 figure 12. zener voltage versus zener current e v z = 15 thru 30 volts v z , zener voltage (volts) 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 10 1 0.1 0.01 t a =25 i z , zener current (ma)
general data e 500 mw do-35 glass motorola tvs/zener device data 6-7 500 mw do-35 glass data sheet figure 13. zener voltage versus zener current e v z = 30 thru 105 volts v z , zener voltage (volts) 10 1 0.1 0.01 30 35 40 45 50 55 60 70 75 80 85 90 95 100 figure 14. zener voltage versus zener current e v z = 110 thru 220 volts v z , zener voltage (volts) 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 10 1 0.1 0.01 t a =25 65 105 i z , zener current (ma) i z , zener current (ma)
general data e 500 mw do-35 glass motorola tvs/zener device data 6-8 500 mw do-35 glass data sheet 500 mw do-35 glass multiple package quantity (mpq) requirements zener voltage regulator diodes e axial leaded case 299-02 do-204ah glass (refer to section 10 for surface mount, thermal data and footprint information.) refer to section 10 for more information on packaging specifications. min min max max millimeters inches dim 3.05 1.52 0.46 e 25.40 5.08 2.29 0.56 1.27 38.10 0.120 0.060 0.018 e 1.000 0.200 0.090 0.022 0.050 1.500 a b d f k all jedec dimensions and notes apply. notes: 1. package contour optional within a and b heat slugs, if any, shall be included within this cylinder, but not subject to the minimum limit of b. 2. lead diameter not controlled in zone f to allow for flash, lead finish buildup and minor irregularities other than heat slugs. 3. polarity denoted by cathode band. 4. dimensioning and tolerancing per ansi y14.5m, 1982. b a k d f f k package option tape and reel 5k type no. suffix rl, rl2 (1) mpq (units) tape and ammo ta, ta2 (1) 5k notes: 1. the a2o suffix refers to 26 mm tape spacing. notes: 2. radial tape and reel may be available. please contact your motorola notes: 2. representative.
register | site index | contact us | home | china site press room sales & distribution about us quality trade shows investor relations employment products product catalog new products on/cherry products documentation selector guide on - line ordering models reliability data pcn samples search order status tech support product quick links associated documents item short desc size data sheet 500 milliwatt hermetically sealed glass silicon zener diodes 76 kb pdf device 1n4691c zener diode t/a mechanical characteristics: case: double slug type, hermetically sealed glass maximum lead temperature for soldering purposes: 230 c, 1/16 from case for 10 seconds finish: all external surfaces are corrosion resistant with readily solderable leads polarity: cathode indicated by color band. when operated in zener mode, cathode will be positive with respect to anode mounting position: any wafer fab location: phoenix, arizona
assembly/test location: seoul, korea features: l complete voltage range - 1.8 to 200 volts l do - 204ah package - smaller than conventional do - 204aa package l double slug type construction l metallurgically bonded construction orderable parts action orderable part short desc. package desc. pin count case outline status price/unit pack qty n/a 1n4691cra1 radial tape and ammo do - 204 2 299 - 02 last shipments register | site index | contact us | home | china site products | press room | sales | about | investor | employment ? semiconductor components industries, l.l.c., 1999, 2000. all rights reserved. terms of use.
|
